@Article{PirralhoPFHPNRAS:2019:InPhEf,
               author = "Pirralho, Mar{\'{\i}}lia J. P. and Peres, Marcelos L. and 
                         Fornari, Celso Israel and Holgado, D. P. A. and Pena, F. S. and 
                         Nakamatsu, S. and Rappl, Paulo Henrique de Oliveira and Abramof, 
                         Eduardo and Soares, D. A. W.",
          affiliation = "{Universidade Federal de Itajub{\'a} (UNIFEI)} and {Universidade 
                         Federal de Itajub{\'a} (UNIFEI)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Universidade Federal de 
                         Itajub{\'a} (UNIFEI)} and {Universidade Federal de Itajub{\'a} 
                         (UNIFEI)} and {Universidade Federal de Itajub{\'a} (UNIFEI)} and 
                         {Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Universidade Federal 
                         de Itajub{\'a} (UNIFEI)}",
                title = "Investigation of photoconductive effect on Bi2Te3 epitaxial film",
              journal = "Applied Physics Letters",
                 year = "2019",
               volume = "114",
               number = "11",
                pages = "112101",
             abstract = "In this work, we present the results of photoconductivity 
                         measurements performed in the temperature range of 12 K300 K on a 
                         150 nm-thick Bi2Te3 film grown by molecular beam epitaxy on a 
                         (111) BaF2 substrate. A transition from negative to positive 
                         photoconductivity is found to occur around 125 K. Resistivity and 
                         Hall data measured under light and dark conditions qualitatively 
                         elucidate the observed phenomena. The Arrhenius plot of 
                         recombination times obtained from photoconductivity decay curves 
                         measured at different temperatures gives the activation energy 
                         associated with the bulk trap level. Using this activation energy 
                         as the effective trap potential, we calculated the generation and 
                         recombination rates as a function of temperature. The analysis 
                         provides a quantitative explanation that predicts the transition 
                         effect observed in the experiment. No evidence of contribution 
                         from surface states is found from the magnetoresistance curves 
                         measured at low temperatures.",
                  doi = "10.1063/1.5084722",
                  url = "http://dx.doi.org/10.1063/1.5084722",
                 issn = "0003-6951",
             language = "en",
           targetfile = "pirralho_investigation.pdf",
        urlaccessdate = "27 abr. 2024"
}